APT60DS04HJ APT60DS04HJ ? rev 0 november, 2009 www.microsemi.com 1-3 absolute maximum ratings symbol parameter max ratings unit v r maximum dc reverse voltage v rrm maximum peak repetitive reverse voltage 45 v i fav rectangular, d = 0.5 t c = 80c 60 i fsm non-repetitive forward surge current t = 10ms t j = 45c 600 a these devices are sens itive to electrostatic discharge. prope r handling procedures should be followe d. see application note apt0502 on www.microsemi.com v rrm = 45v i f = 60a @ tc = 80c application ? switch mode power supplies rectifier ? induction heating ? welding equipment features ? ultra fast recovery times ? soft recovery characteristics ? high current ? very low stray inductance ? high level of integration ? isotop ? package (sot-227) benefits ? outstanding performance at high frequency operation ? low losses ? low noise switching ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? rohs compliant isotop ? schottky diode full bridge power module ~ ~ - +
APT60DS04HJ APT60DS04HJ ? rev 0 november, 2009 www.microsemi.com 2-3 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 30 i r reverse current v r = 45v t j = 125c 250 ma t j = 25c 0.58 v f forward voltage i f = 60a t j = 125c 0.48 v thermal and package characteristics symbol characteristic min typ max unit r thjc junction to case thermal resistance 0.8 r thja junction to ambient 20 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j ,t stg storage temperature range -55 150 t l max lead temp for soldering:0.063? from case for 10 sec 300 c torque mounting torque (mounting = 8-32 or 4mm machine and terminals = 4mm machine) 1.5 n.m wt package weight 29.2 g sot-227 (isotop ? ) package outline 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) 3.30 (.130) 4.57 (.180)
APT60DS04HJ APT60DS04HJ ? rev 0 november, 2009 www.microsemi.com 3-3 typical performance curve maximum effective transient thermal impeda nce, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) forward characteristic t j =25c t j =125c 0 20 40 60 80 100 120 0.00.20.40.60.81.0 v f (v) i f (a) isotop? is a registered trademark of st microelectronics nv microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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